smd type transistors 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1 base 2 collector 3 emitter features high breakdown voltage and large current capacity. fast switching speed. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -120 v collector-emitter voltage v ceo -100 v emitter-base voltage v ebo -6 v collector current i c -1 a collector current (pulse) i cp -2 a collector dissipation p c 0.8 w collector dissipation t c =25 p c 10 w jumction temperature t j 150 storage temperature t stg -55to+150 sales@twtysemi.com http://www.twtysemi.com sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type transistors 2SC4134 smd type transistors product specification 4008-318-123
smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb = 100v, i e =0 100 na emitter cutoff current i ebo v eb =4v,i c =0 100 na dc current gain h fe v ce =5v , i c = 100ma 100 400 gain bandwidth product f t v ce =10v,i c =100ma 120 mhz output capacitance c ob v cb = 10v , f = 1.0mhz 8.5 pf collector-emitter saturation voltage v ce(sat) i c =400ma,i b =40ma 0.1 0.4 v base-emitter saturation voltage v be(sat) i c =400ma,i b = 40ma 0.85 1.2 v collector-base breakdown voltage v (br)cbo i c =10a,i e =0 120 v collector-emitter breakdown voltage v (br)ceo i c =1ma,r be = 100 v emitter-base breakdown voltage v (br)ebo i e =10a,i c =0 6 v turn-on time t on 80 ns storage time t stg 850 ns fall time t f 50 ns 2SC4134 h fe classification rank r s t hfe 100 200 140 280 200 400 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type transistors product specification 4008-318-123
|
